| PART |
Description |
Maker |
| MGFC44V6472 |
6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFK38V2732 K382732 |
From old datasheet system
12.7~13.2GHZ BAND 6W INTERNALLY MATCHED GAAS FET
12.7-13.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC44V5964 |
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC44V4450 |
4.4-5.0GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC36V6472A04 MGFC36V6472A |
6.4 ~ 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V3742A |
3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V6472A C456472A |
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC38V6472 |
RECTIFIER BRIDGE 10A 400V 220A-ifsm 1V-vf 5uA-ir GBU 20/BOX
6.4 - 7.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FLM5359-4F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
Eudyna Devices Inc
|
